Metal plug local interconnect

Details Metal plug local interconnect Metal plug local interconnect

1997-07-24

1999-10-12

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257388, 257903, 438647, 438649, H01L 2976, H01L 2994

Patent

active

059659246

ABSTRACT:
A semiconductor structure that includes a silicon substrate which has a top surface, a diffusion region formed in the substrate adjacent to the top surface, a polysilicon gate formed on the top surface of the substrate adjacent to but not contacting the diffusion region, an insulator layer substantially covers the polysilicon gate and the diffusion region, the layer contains a via opening therein, and an electrically conducting plug filling at least partially the via opening providing electrical communication between the polysilicon gate and the diffusion region.

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Silicon Processing For The VLSI Era, Vol. 2: Process Integration; Stanley olf, Ph.D.; pp. 144-145, 212-214, and 354-355.

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