Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-02-20
1999-12-07
Quach, T. N.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257757, 257763, 438630, H01L 2943
Patent
active
059988711
ABSTRACT:
A semiconductor device, has a TiN plug is formed to filled up a contact hole which is formed to penetrate through an insulator film on a conductive silicon layer in a surface region of a silicon substrate. A first titanium silicide film is formed on a bottom surface of the TiN plug, so that the TiN plug is electrically connected to the conductive silicon layer through the first titanium silicide film. A second titanium silicide film is formed on a top surface of the TiN plug, and a polysilicon electrode is formed on the second titanium silicide film, so that the TiN plug is electrically connected to the polysilicon electrode through the second titanium silicide film. Thus, the contact resistance between the TiN plug and the polysilicon electrode is reduced.
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Lee et al., "Simultaneously Formed Storage Node Contact and Metal Contact Cell (SSMC) for 1Gb DRAM and Beyond", 1996 IEEE IEDM Tech. Dig., Dec. 1996, pp. 593-596.
Raaijmakers, I., et al., "Contact Hole Fill with Low Temperature LPCVD TiN", VMIC Conf., Jun. 12-13, 1990, pp. 219-225.
Wolf, S., Silicon Processing for the VLSI Era, vol. 2, Lattice Press, 1990, pp. 183-186.
NEC Corporation
Quach T. N.
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