Metal patterning with dechlorinization in integrated circuit man

Details Metal patterning with dechlorinization in integrated circuit man Metal patterning with dechlorinization in integrated circuit man

1992-12-10

1993-12-14

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156656, 156664, 134 2, 134 31, 134 33, C23F 100, C23F 1500

Patent

active

052698785

ABSTRACT:
After a metal deposition is patterned using a plasma etch, the metal pattern is sprayed with steam and water. During the spraying the wafer is rotated to ensure proper distribution and removal of the spray. The spray removes chlorine residue from the etch that might otherwise corrode the metal pattern. After the spray, the spin rate is increased to dry the wafer. The net result is a faster and more effective method for chlorine removal from a plasma-etched metal pattern.

REFERENCES:
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 5000819 (1991-03-01), Pedder et al.
patent: 5078832 (1992-01-01), Tanaka
patent: 5105556 (1992-04-01), Kurokawa et al.
patent: 5200025 (1993-04-01), Toei et al.

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