Metal oxide semiconductor transistors having a polysilicon gate

Details Metal oxide semiconductor transistors having a polysilicon gate Metal oxide semiconductor transistors having a polysilicon gate

1994-09-01

1996-08-27

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 57, 257 66, 257347, H01L 2976, H01L 2904, H01L 3136, H01L 2701

Patent

active

055503977

ABSTRACT:
The gate electrode of a polysilicon gate MOS transistor--the transistor having either a thin film polysilicon substrate or a bulk monocrystalline substrate--has a pair of contiguous regions: a heavily doped gate electrode region near the source, and a lightly doped gate electrode region near the drain. The gate electrode region near the drain is thus doped significantly more lightly, in order to reduce electric fields in the channel region in the neighborhood of the drain (and hence reduce field induced leakage currents) when voltages are applied to turn transistor OFF. At the same time, sufficient impurity doping is introduced into the gate electrode region near the source in order to enable the transistor to turn ON when other suitable voltages are applied.

REFERENCES:
patent: 4862237 (1989-08-01), Morozumi
Hayashi, F. et al., "A High Performance Polysilicon TFT Using RTA and Plasma Hydrogenation Applicable to Highly Stable SRAMs of 16Mbit and Beyond," 1992 Symp. on VLSI tech. Digest of Tech. Papers, pp. 36-37.
Tanaka, K. et al., "Characteristics of Offset-Structure Polycrystalline-Silicon Thin-Film Transistors," IEEE Electron Device Lett., vol. 9, No. 1, Jan. 1988, pp. 23-25.

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