Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-03-02
2010-06-29
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S410000, C257S411000, C257SE21205
Reexamination Certificate
active
07745889
ABSTRACT:
A metal oxide semiconductor (MOS) transistor with a Y structure metal gate is provided. The MOS transistor includes a substrate, a Y structure metal gate positioned on the substrate, two doping regions disposed in the substrate on two sides of the Y structure metal structure, a spacer, an insulating layer positioned outside the spacer, a dielectric layer positioned outside the insulating layer and a bevel edge covering the spacer. The spacer has a vertical sidewall, and the vertical sidewall surrounds a recess. A part of the Y structure metal gate is disposed in the recess, and a part of the Y structure metal gate is positioned on the bevel edge.
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Cheng Li-Wei
Hsu Chia-Jung
Lin Chin-Hsiang
Hsu Winston
Nguyen Ha Tran T
United Microelectronics Corp.
Whalen Daniel
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