Metal oxide semiconductor transistor and method for...

Details Metal oxide semiconductor transistor and method for... Metal oxide semiconductor transistor and method for...

2007-11-27

2007-11-27

Rose, Kiesha (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

11215957

ABSTRACT:
A metal oxide semiconductor (MOS) transistor includes a source region having at least one source contact; a drain region having at least one drain contact; and a gate provided between the source region and the drain region, wherein the number of source contacts included in the source region is different from the number of drain contacts included in the source region.

REFERENCES:
patent: 5933039 (1999-08-01), Hui et al.
patent: 6140687 (2000-10-01), Shimomura et al.
patent: 6768143 (2004-07-01), Fredeman et al.

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