Metal oxide semiconductor transistor and a method for manufactur

Details Metal oxide semiconductor transistor and a method for manufactur Metal oxide semiconductor transistor and a method for manufactur

1995-12-05

1996-08-20

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257285, 257345, 257402, 257403, 257404, 257607, 257657, 257919, 437 27, 437 29, 437 44, 437 45, 437933, H01L 2980, H01L 21265

Patent

active

055481434

ABSTRACT:
AMOS transistor with enhanced electrical characteristics and a method for manufacturing the same. In the channel region, a first impurity region is provided for adjusting a threshold voltage, a second impurity region is provided which serves as a diffusion barrier, and a third impurity region is provided for preventing a punchthrough. These regions are formed sequentially at subsequently shallower depths in the substrate. The disclosed transistor minimizes short-channel effects and punchthrough without reducing the current driving capability of the device.

REFERENCES:
patent: 3891468 (1975-06-01), Ito et al.
patent: 4021835 (1977-05-01), Etoh et al.
patent: 4145233 (1979-03-01), Sefick et al.

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