Metal oxide semiconductor transistor

Details Metal oxide semiconductor transistor Metal oxide semiconductor transistor

2007-08-09

2010-06-29

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C438S218000, C438S285000

Reexamination Certificate

active

07745847

ABSTRACT:
The present invention provides a method for fabricating a metal oxide semiconductor transistor. First, a semiconductor substrate is provided and at least a gate is formed on the semiconductor substrate. A protective layer is then formed on the semiconductor substrate and the gate. Subsequently, at least a recess is formed in the semiconductor substrate adjacent to the gate, and then an epitaxial layer is formed in the recess. A lightly doped region is formed in the semiconductor substrate adjacent to the gate. Finally, a spacer is formed on the sidewall of the gate.

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