Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-28
2005-06-28
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21681, C257SE21685, C365S185260
Reexamination Certificate
active
06911701
ABSTRACT:
A metal oxide semiconductor transistor includes a semiconductor substrate; a source area formed in a device area of the semiconductor substrate; a drain area formed in the device area; a gate layer formed on and across the device area between the source area and the drain area; a control gate layer; and a diffusion area formed in the device area between the gate area and the control gate area. The control gate layer has a first part including a first end of the control gate layer and a second part including a second end of the control gate layer. The first part is formed on the device area between the source area and the gate layer. The first end is disposed so that there is a gap between the first end and an edge of the device area.
REFERENCES:
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patent: 2002/0145166 (2002-10-01), Kachelmeier
patent: 2003/0030081 (2003-02-01), Arima
patent: 2002-222944 (2002-08-01), None
T. Shibata et al., “A Functional MOS Transistor Featuring Gate-Level Weighted Sum and Threshold Operations”IEEE Transactions on Electron Devices, Jun. 1992,pp. 1444-1455, vol. 39(6).
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Arima Yutaka
Flynn Nathan J.
Leydig & Voit & Mayer
Mitsubishi Denki & Kabushiki Kaisha
Wilson Scott R.
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