Metal oxide semiconductor (MOS) type semiconductor device...

Details Metal oxide semiconductor (MOS) type semiconductor device... Metal oxide semiconductor (MOS) type semiconductor device...

2008-07-01

2008-07-01

Lewis, Monica (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27098

Reexamination Certificate

active

07394119

ABSTRACT:
A semiconductor device with a metal oxide semiconductor (MOS) type transistor structure, which is used for, e.g. a static random access memory (SRAM) type memory cell, includes a part that is vulnerable to soft errors. In the semiconductor device with the MOS type transistor structure, an additional load capacitance is formed at the part that is vulnerable to soft errors.

REFERENCES:
patent: 4903087 (1990-02-01), Jerome et al.
patent: 6740958 (2004-05-01), Nakazato et al.
patent: 6-310683 (1994-11-01), None
patent: 07086418 (1995-03-01), None
Derwent Abstract for US Patent No. 4,903,087.
ISE TCAD Release 8.0, “ISE Part II Dessis,” vol. 4a, pp. 11.273-11.280, ISE Integrated Systems Engineering, 1995-2002.

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