Metal oxide semiconductor (MOS) transistors having a...

Details Metal oxide semiconductor (MOS) transistors having a... Metal oxide semiconductor (MOS) transistors having a...

2010-01-06

2011-10-18

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S244000

Reexamination Certificate

active

08039876

ABSTRACT:
A metal oxide semiconductor (MOS) includes an isolation layer disposed in a semiconductor substrate to define an active region. A source region and a drain region are disposed on both sides of the active region such that a first direction is defined from the source region to the drain region. A channel recess is disposed in the active region between the source and drain regions. The channel recess has a convex surface when viewed from a cross-sectional view taken along a second direction orthogonal to the first direction. A gate electrode fills the channel recess and crosses the active region in the second direction. A gate insulating layer is interposed between the gate electrode and the active region.

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Korean Office Action issued in corresponding Korean Patent Application No. KR 10-2004-0088512 mailed Jan. 26, 2006.

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