Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-08
2008-04-08
Le, Thao X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S217000, C257S370000, C257S371000, C257S374000, C257S377000, C257SE29287, C257SE21562, C257SE21570
Reexamination Certificate
active
11271922
ABSTRACT:
A semiconductor device includes a first semiconductor layer that is formed on a first insulating layer; a second insulating layer that is formed on the first semiconductor layer; a second semiconductor layer that is formed on the second insulating layer; a first gate electrode that is formed on the second semiconductor layer; first conductive-source and drain layers that are formed in the second semiconductor layer and are arranged at sides of the gate electrode; and a first wiring layer that connects the first gate electrode to the first semiconductor layer.
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Armand Marc-Anthony
Le Thao X.
Seiko Epson Corporation
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