Metal oxide semiconductor field effect transistors (MOSFETS)...

Details Metal oxide semiconductor field effect transistors (MOSFETS)... Metal oxide semiconductor field effect transistors (MOSFETS)...

2005-01-11

2005-01-11

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S650000, C257S751000, C257S382000, C347S057000, C347S059000, C347S061000

Reexamination Certificate

active

06841830

ABSTRACT:
A MOSFET and the method for fabricating them are disclosed to make the inkjet head chips. The MOSFET has the scaled-down junction formation for the source and drain. Using a lower temperature process and interlayer dielectric, the source and drain dopants can not be diffused deeply due to high-temperature driver-in. The contact holes of the drain are provided with plugs of refractory material to avoid spiking between the metal and silicon. This achieves the requirement of high-density devices on the print head chip.

REFERENCES:
patent: 6102528 (2000-08-01), Burke et al.
patent: 6666545 (2003-12-01), Liu et al.
patent: 20040124449 (2004-07-01), Liu et al.

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