Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-03
2005-05-03
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S377000, C257S389000, C257S390000, C257S407000, C257S408000, C257S409000, C257S413000
Reexamination Certificate
active
06888205
ABSTRACT:
A metal oxide semiconductor transistor integrated in a wafer of semiconductor material includes a gate structure located on a surface of the wafer and includes a gate oxide layer. The gate oxide layer includes a first portion having a first thickness and a second portion having a second thickness differing from the first thickness.
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Patent abstracts of Japan, Publication No. 2001015741 published on Jan. 19, 2001. Applicant: Toshiba Corp; Inventor: Nakagawa Akio. Title: Field Effect Transistor.
Patent Abstracts of Japan, “Field Effect Transistor”, Publication No. 2001015741 published Jan. 19, 2001. Applicant: Toshiba Corp; Inventor: Nakagawa Akio.
Croce Giuseppe
Moscatelli Alessandro
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Jorgenson Lisa K.
STMicroelectronics S.r.l.
Tran Minhloan
Tran Tan
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