Metal oxide semiconductor field effect transistor and method of

Details Metal oxide semiconductor field effect transistor and method of Metal oxide semiconductor field effect transistor and method of

1998-04-01

2000-06-20

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257389, 257408, H01L 2976

Patent

active

06078086&

ABSTRACT:
A MOSFET includes a semiconductor substrate of a first conductivity type including a field region and an active region; a gate insulating film on a portion of the active region, the gate insulating film having two edge parts and a mid-part, the two edge parts being thicker than the mid-part; a gate electrode on the gate insulating film; sidewall spacers on the sides of the gate electrode and the gate insulating film; heavily doped regions of a second conductivity type in the semiconductor substrate under the two edge parts of the gate insulating film; normally doped regions of the second conductivity type in the semiconductor substrate on both sides of the gate insulating film; lightly doped regions of the second conductivity type in the semiconductor substrate on the sides of the sidewall spacers; and doped regions of the first conductivity type below the normally doped region of the second conductivity type under the sidewall spacers.

REFERENCES:
patent: 5015598 (1991-05-01), Verhaar
patent: 5270226 (1993-12-01), Hori et al.
patent: 5270227 (1993-12-01), Kameyama et al.
patent: 5314834 (1994-05-01), Mazure et al.
patent: 5349225 (1994-09-01), Redwine et al.
patent: 5422506 (1995-06-01), Zamapian
patent: 5426063 (1995-06-01), Kaneko et al.
patent: 5434093 (1995-07-01), Chau et al.
patent: 5436482 (1995-07-01), Ogoh
patent: 5466957 (1995-11-01), Yuki et al.
patent: 5472894 (1995-12-01), Hsu et al.
patent: 5538913 (1996-07-01), Hong
patent: 5567965 (1996-10-01), Kim
patent: 5580799 (1996-12-01), Funaki
patent: 5597752 (1997-01-01), Niwa
patent: 5773863 (1998-06-01), Burr et al.
patent: 5780902 (1998-07-01), Komuro

Affiliated with

Also associated with

Rating

Metal oxide semiconductor field effect transistor and method of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metal oxide semiconductor field effect transistor and method of , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal oxide semiconductor field effect transistor and method of will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1855503