Metal oxide semiconductor field effect transistor

Details Metal oxide semiconductor field effect transistor Metal oxide semiconductor field effect transistor

2005-12-28

2008-10-07

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S192000, C257S191000, C257SE21335

Reexamination Certificate

active

07432541

ABSTRACT:
A metal oxide semiconductor field effect transistor (MOSFET) is disclosed. The MOSFET includes a semiconductor substrate, a germanium layer formed by implanting germanium (Ge) ions into the semiconductor substrate, an epitaxial layer doped with high concentration impurities over the germanium layer, a gate structure on the epitaxial layer, and source/drain regions with lightly doped drain (LDD) regions in the semiconductor substrate. The germanium layer supplies carriers into the epitaxial layer so that short channel effects are reduced.

REFERENCES:
patent: 6313486 (2001-11-01), Kencke et al.
patent: 6689671 (2004-02-01), Yu et al.
patent: 2006/0057810 (2006-03-01), Smith et al.

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