Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-08
2006-08-08
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S337000, C438S348000
Reexamination Certificate
active
07087959
ABSTRACT:
An MOS device includes a semiconductor layer formed on a substrate, the substrate defining a horizontal plane and a vertical direction normal to the horizontal plane. First and second source/drain regions are formed in the semiconductor layer proximate an upper surface of the semiconductor layer, the first and second source/drain regions being spaced apart relative to one another. A gate is formed proximate the upper surface of the semiconductor layer and disposed at least partially between the first and second source/drain regions. A first dielectric region is formed in the MOS device, the first dielectric region defining a trench extending downward from the upper surface of the semiconductor layer to a first distance into the semiconductor layer, the first dielectric region being formed between the first and second source/drain regions. The MOS device further includes a shielding structure formed primarily in the first dielectric region, at least a portion of the shielding structure being disposed adjacent a bottom wall of the first dielectric region and/or one or more sidewalls of the first dielectric region.
REFERENCES:
patent: 4939567 (1990-07-01), Kenney
patent: 5859466 (1999-01-01), Wada
patent: 6445019 (2002-09-01), Van Dalen
patent: 2005/0082610 (2005-04-01), Shibib et al.
B. Bakeroot et al., “Using ‘Adaptive Resurf’ Technique and Field Plate Working to Improve the Safe Operating Area of n-type Drain Extended MOS Transistors,”Modeling and Simulation of Microsystems, pp. 498-501, 2001.
S-C. Lee et al., “A New Vertical Channel LDMOS,”Physica Scripta T101, pp. 58-60, 2002.
Shibib Muhammed Ayman
Xu Shuming
Agere Systems Inc.
Owens Douglas W.
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