Metal oxide semiconductor device having a common gate electrode

Details Metal oxide semiconductor device having a common gate electrode Metal oxide semiconductor device having a common gate electrode

1994-05-31

1995-08-01

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257754, 257763, 257412, 257369, H01L 2354

Patent

active

054382149

ABSTRACT:
A semiconductor device and a method of fabricating the semiconductor device are disclosed in which the method comprises the steps of forming an insulating film for element-isolation and a gate insulating film on a surface of a semiconductor substrate, forming a semiconductor film on the element-isolation insulating film and the gate insulating film, removing a part of the semiconductor film corresponding to a boundary between a first region for formation of an N-channel transistor and a second region for formation of a P-channel transistor, introducing N type impurities into a part of the semiconductor film located on the first region and introducing P type impurities into a part of the semiconductor film located on the second region, forming a metallic film over the semiconductor film having the impurities introduced therein and the element-isolation insulating film, and patterning the metallic film and the semiconductor film into a pattern of a gate electrode common to the N-channel transistor and the P-channel transistor.

REFERENCES:
patent: Re34158 (1993-01-01), Watanabe et al.
patent: 5190886 (1993-03-01), Asahina
patent: 5218232 (1993-06-01), Yuzurihara et al.
patent: 5268590 (1993-10-01), Pfiester et al.

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