Metal-oxide-semiconductor device formed in silicon-on-insulator

Details Metal-oxide-semiconductor device formed in silicon-on-insulator Metal-oxide-semiconductor device formed in silicon-on-insulator

2005-05-10

2005-05-10

Chaudhari, Chandra (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S286000, C257S336000, C257S340000

Reexamination Certificate

active

06890804

ABSTRACT:
A semiconductor device includes a substrate of a first conductivity type, an insulating layer formed on at least a portion of the substrate, and an epitaxial layer of a second conductivity type formed on at least a portion of the insulating layer. First and second source/drain regions of the second conductivity type are formed in the epitaxial layer proximate an upper surface of the epitaxial layer, the first and second source/drain regions being spaced laterally from one another. A gate is formed above the epitaxial layer proximate the upper surface of the epitaxial layer and at least partially between the first and second source/drain regions. The device further includes a first source/drain contact formed through the epitaxial layer and insulating layer, the first source/drain contact configured so as to be in direct electrical connection with the substrate, the first source/drain region and the epitaxial layer, and a second source/drain contact formed through the epitaxial layer, the second source/drain contact configured so as to be in direct electrical connection with the second source/drain region.

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