Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-30
2006-05-30
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S360000
Reexamination Certificate
active
07053452
ABSTRACT:
A MOS device for an electrostatic discharge protection circuit provided. A gate structure is disposed on the substrate. A source region and a drain region are formed in the substrate beside the gate structure. A doped layer is disposed underneath the source region and the drain region within the substrate but apart from the source region and the drain region. An extended doped region is disposed within the substrate adjacent to the doped layer and the source region. Two parasitic bipolar junction transistors (BJT) are formed in the MOS device. One BJT includes the drain region, the substrate and the source region. Another BJT includes the drain region, the substrate and the doped layer. A discharge current flowing into the drain region is channeled to a common voltage terminal via these two parasitic bipolar junction transistors.
REFERENCES:
patent: 5158899 (1992-10-01), Yamagata
patent: 5932914 (1999-08-01), Horiguchi
patent: 6303964 (2001-10-01), Pulvirenti et al.
patent: 6399990 (2002-06-01), Brennan et al.
patent: 6424013 (2002-07-01), Steinhoff et al.
patent: 6630719 (2003-10-01), Roche
patent: 6855611 (2005-02-01), Chen et al.
patent: 2004/0164354 (2004-08-01), Mergens et al.
Jiang Chyun IP Office
Wilson Allan R.
LandOfFree
Metal oxide semiconductor device for electrostatic discharge... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal oxide semiconductor device for electrostatic discharge..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal oxide semiconductor device for electrostatic discharge... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3651250