Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-08
2011-03-08
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257SE29256
Reexamination Certificate
active
07902600
ABSTRACT:
A metal oxide semiconductor device comprising a substrate, at least an isolation structure, a deep N-type well, a P-type well, a gate, a plurality of N-type extension regions, an N-type drain region, an N-type source region and a P-type doped region is provided. The N-type extension regions are disposed in the substrate between the isolation structures and either side of the gate, while the N-type drain region and the N-type source region are respectively disposed in the N-type extension regions at both sides of the gate. The P-type well surrounds the N-type extension regions, and the P-type doped region is disposed in the P-type well of the substrate and is isolated from the N-type source region by the isolation structure.
REFERENCES:
patent: 6822296 (2004-11-01), Wang
patent: 7091079 (2006-08-01), Chen et al.
patent: 7755147 (2010-07-01), Satoh
patent: 2005/0227448 (2005-10-01), Chen et al.
patent: 2007/0132033 (2007-06-01), Wu et al.
Chen Chun-Ming
Huang Chung-Ming
Lin Shin-Kuang
Wang Lung-Chih
Yang Che-Ching
Harrison Monica D
J.C. Patents
Monbleau Davienne
United Microelectronics Corp.
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