Metal-oxide-semiconductor device

Details Metal-oxide-semiconductor device Metal-oxide-semiconductor device

2011-03-01

2011-03-01

Lee, Eugene (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S342000, C257S492000, C257SE29256

Reexamination Certificate

active

07898027

ABSTRACT:
A MOS device includes a semiconductor substrate having a first conductive type, a source region, a gate structure, and a drain region having a second conductive type. The gate structure is formed on the semiconductor substrate and substantially parallel to a first direction. The source region and the drain region are both disposed in the semiconductor substrate, and on two opposite sides of the gate structure. The source region includes at least a source doped region having the second conductive type, and at least a source contact region having the first conductive type, and the source doped region and the source contact region are alternately arranged along the first direction.

REFERENCES:
patent: 6169309 (2001-01-01), Teggatz et al.
patent: 6933569 (2005-08-01), Koh
patent: 2006/0186467 (2006-08-01), Pendharkar et al.
patent: 1283030 (2007-06-01), None
patent: 1283910 (2007-07-01), None

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