Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-10-25
1998-06-02
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257409, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
057604410
ABSTRACT:
A p-type high concentration doped region is formed in a p-type semiconductor substrate between a n-type doped region as part of an input protection circuit and another n-type doped region as part of internal circuitry. A plate is divided into two over the high concentration doped region. The high concentration doped region suppresses generation of a parasitic MOS transistor with the plate for a gate, one of the n-type doped regions for a source, and the other for a drain.
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Meier Stephen
Nippon Steel Semiconductor Corporation
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