Metal oxide semiconductor capacitor utilizing dummy lithographic

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257368, H01L 2976, H01L 2994, H01L 31062

Patent

active

061570672

ABSTRACT:
A semiconductor structure (and method for manufacturing the same) comprises an active array of first elements having a first manufacturing precision, a peripheral region surrounding the active array, the peripheral region including second elements having a second manufacturing precision less than the first manufacturing precision, wherein the second elements are isolated from the active array and comprise passive devices for improving operations of the active array.

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patent: 5463587 (1995-10-01), Maruyama
patent: 5496757 (1996-03-01), Rosner
patent: 5635421 (1997-06-01), Ting

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