Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-06-18
1999-10-05
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257532, H01L 27108
Patent
active
059628871
ABSTRACT:
A reduced threshold voltage (Vt) magnitude or depletion mode metal-oxide-semiconductor (MOS) capacitor capable of use in a charge pump circuit such as a substrate bias voltage generator in a dynamic random access memory (DRAM) integrated circuit. The Vt magnitude of a p-channel MOS field-effect transistor (FET) used as a capacitor is reduced by using the same ion-implantation step used to increase the Vt magnitude of an n-channel MOS FET. The Vt magnitude of an n-channel MOS FET used as a capacitor is reduced by using the same ion-implantation step used to increase the Vt magnitude of a p-channel MOS FET. By sufficiently reducing Vt magnitude, a depletion mode MOS capacitor is formed. Reduced Vt magnitude and depletion mode MOS capacitors increase the useful voltage range of the capacitor, optimizing operation at low supply voltages.
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patent: 5266821 (1993-11-01), Chern, et al.
patent: 5665995 (1997-09-01), Hsue et al.
Wolf, S., "Silicon Processing for the VLSI ERA vol. 2: Process Intergration", Lattice Press, Sunset Beach, CA, 392-395, (1990).
Ben G. Streetman, "Solid State Electronic Devices", 3rd Edition, Prentice Hall Series in Solid State Physical Electronics, Nick Holonyak, Jr., Series Editor, pp. 301-309, (1990), Jan. 90.
Ma Manny K.F.
Manning Troy A.
Micro)n Technology, Inc.
Prenty Mark V.
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