Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2000-06-19
2001-08-28
Bowers, Charles (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S239000, C438S254000, C438S398000, C438S253000, C257S324000, C257S752000, C257S758000, C257S763000
Reexamination Certificate
active
06281541
ABSTRACT:
BACKGROUND OF THE INVENTION
(1) Field of the Invention
The present invention relates to a method of fabricating a metal-oxide-metal capacitor, and more particularly, to a method of forming an improved metal-oxide-metal capacitor in the fabrication of an integrated circuit device.
(2) Description of the Prior Art
Capacitors are critical components in the integrated circuit devices of today. For example, in analog integrated circuit devices, capacitors play an important role. Both polysilicon and metal-oxide-metal capacitors have been used in the art. Metal-oxide-metal (MOM) capacitors can be used at multiple levels and in contacts or vias. Polysilicon capacitors require complex or special processes. They have problems such as a lack of flexibility, metal interference, and dopant diffusive effect, among others.
U.S. Pat. Nos. 5,576,240 and 5,654,581 to Radosevich et al, U.S. Pat. No. 5,479,316 to Smrtic et al, and U.S. Pat. No. 5,708,559 to Brabazon all disclose various methods of forming metal-oxide-metal capacitors. U.S. Pat. No. 5,589,416 to Chittipeddi teaches fabrication of a metal-oxide-polysilicon capacitor.
SUMMARY OF THE INVENTION
Accordingly, it is a primary object of the invention to provide an effective and very manufacturable process for producing a metal-oxide-metal capacitor.
Another object of the present invention is to provide a method for fabricating a metal-oxide-metal capacitor with good step coverage and uniformity.
In accordance with the objects of this invention, a method for fabricating a metal-oxide-metal capacitor is achieved. A first insulating layer is provided overlying a semiconductor substrate. A metal line is formed on the surface of the first insulating layer to act as the node contact for the capacitor. A second insulating layer is deposited overlying the metal line. The second insulating layer is etched through to form via openings to the metal line. The via openings are filled with metal plugs wherein the metal plugs form the bottom plate electrode of the capacitor. The second insulating layer surrounding the metal plugs is etched into so that the metal plugs protrude from the surface of the second insulating layer. A capacitor dielectric layer is deposited over the surface of the second insulating layer and the metal plugs. A barrier metal layer is deposited overlying the capacitor dielectric layer. A metal layer is deposited overlying the barrier metal layer and patterned to form the upper plate electrode of the capacitor completing the fabrication of a metal-oxide-metal capacitor.
Also in accordance with the objectives of the invention, a metal-oxide-metal capacitor is achieved. The metal-oxide-metal capacitor comprises a metal contact node on a first insulating layer overlying a semiconductor substrate, a bottom plate electrode comprising metal plugs extending through a second insulating layer to contact the node contact, a capacitor dielectric layer overlying the second insulating layer and metal plugs, a barrier metal layer overlying the capacitor dielectric layer, and a metal layer overlying the capacitor dielectric layer wherein the metal layer forms the upper electrode of the capacitor.
REFERENCES:
patent: 5479316 (1995-12-01), Smrtic et al.
patent: 5576240 (1996-11-01), Radosevich et al.
patent: 5589416 (1996-12-01), Chittipeddi
patent: 5654581 (1997-08-01), Radosevich et al.
patent: 5708559 (1998-01-01), Brabazon et al.
patent: 5879985 (1999-03-01), Gambino et al.
patent: 6046469 (2000-04-01), Yamazaki et al.
patent: 6072210 (2000-06-01), Choi
patent: 6090698 (2000-07-01), Lee
patent: 6124912 (2000-09-01), Moore
patent: 6168989 (2001-01-01), Chiang et al.
patent: 6169010 (2001-01-01), Higashi
patent: 1020901-A2 (2000-07-01), None
Bowers Charles
Chartered Semiconductor Manufacturing Ltd.
Kebede Brook
Pike Rosemary L. S.
Saile George O.
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