Metal oxide integrated circuit on silicon germanium substrate

Details Metal oxide integrated circuit on silicon germanium substrate Metal oxide integrated circuit on silicon germanium substrate

2005-03-08

2005-03-08

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S240000

Reexamination Certificate

active

06864146

ABSTRACT:
Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 200 nanometers formed above a silicon germanium substrate. Typical grain sizes are 40 nm and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and a xylene exchange is performed just prior to spinning. The precursor is dried in air at a temperature of about 400° C. and then furnace annealed in oxygen at a temperature of between 600° C. and 850° C.

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