Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-01-25
1997-09-23
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257295, 257764, 257535, 361305, 3613215, 361322, H01L 27108
Patent
active
056708084
ABSTRACT:
A semiconductor device in which an SiO.sub.2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a lower electrode which has a multi-layer structure consisting of a Ti layer, an Mo layer, and a Pt layer in this order from underside. The capacitor also includes a dielectric film made of strontium titanate. The capacitor further includes an upper electrode which has a multi-layer structure consisting of a WN.sub.x layer (120 um) and a W layer (300 nm) in this order from underside. That surface of the upper electrode, which is in contact with the dielectric film, is defined by the tungsten nitride layer.
REFERENCES:
patent: 5187557 (1993-02-01), Zenke
patent: 5283462 (1994-02-01), Stengel
patent: 5440174 (1995-08-01), Nishitsuji
patent: 5486488 (1996-01-01), Kamiyama
"Low Leakage, Temperature Invariant, High Dielectric Constant Films, using Multilayered Sol-Gel Fabrication," IBM Technical Disclosure Bulletin, vol. 37, No. 9, Sep. 1994, p. 27.
Sandwip, et al., "Cubic Paraelectric (Nonferroelectric) Perovskite PLT Thin Films with High Permittivity for ULSI DRAM's and Decoupling Capacitors," IEEE Transactions on Electron Devices, vol. 39, No. 7, Jul. 1992, pp. 1607-1613.
Abe Kazuhide
Aoyama Tomonori
Kitaura Yoshiaki
Komatsu Shuichi
Nishihori Kazuya
Guay John
Jackson Jerome
Kabushiki Kaisha Toshiba
LandOfFree
Metal oxide capacitor with a WN.sub.X electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal oxide capacitor with a WN.sub.X electrode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal oxide capacitor with a WN.sub.X electrode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1939564