Metal nitride oxide semiconductor device

Details Metal nitride oxide semiconductor device Metal nitride oxide semiconductor device

1994-09-22

1996-04-09

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257325, 257411, H01L 29792, H01L 2976

Patent

active

055064329

ABSTRACT:
A metal nitride oxide semiconductor device in which a defective peeling off of a silicon nitride film is prevented from occurring. The metal nitride oxide semiconductor device comprises a silicon nitride film provided in such a manner that, as viewed from the source and drain regions, an edge of the silicon nitride film on the sides of the source and drain regions is located on the outer side of the inner side plane of the field insulating film surrounding the MNOS transistor.

REFERENCES:
patent: 4198252 (1980-04-01), Hsu

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