Metal MEMS devices and methods of making same

Details Metal MEMS devices and methods of making same Metal MEMS devices and methods of making same

2007-01-22

2009-08-04

Louie, Wai-Sing (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C257S414000, C257S734000, C257SE23094, C257SE23001, C438S411000, C438S461000, C438S611000, C438S049000, C438S048000

Reexamination Certificate

active

07569411

ABSTRACT:
Metal MEMS structures are fabricated from metal substrates, preferably titanium, utilizing micromachining processes with a new deep etching procedure to provide released microelectromechanical devices. The deep etch procedure includes metal anisotropic reactive ion etching utilizing repetitive alternating steps of etching and side wall protection. Variations in the timing of the etching and protecting steps produces walls of different roughness and taper. The metal wafers can be macomachined before forming the MEMS structures, and the resulting wafers can be stacked and bonded in packages.

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