Metal line structure and method of manufacturing the same

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430318, 216 2, 216 77, 216 78, 438585, 438595, G03F 726

Patent

active

059855207

ABSTRACT:
A method for forming a metal line structure comprising the steps of providing a semiconductor substrate, and then sequentially forming a metallic layer and an insulating layer over the substrate. Next, photolithographic and etching processes are performed to create a pattern on the insulating layer exposing portions of the metallic layer and forming insulating lines. Then, spacers are formed on the sidewalls of the insulating lines. Thereafter, the metal layer is etched using the insulating lines and the spacers as masks, and the substrate as an etching stop layer. The metal etching also removes the insulating lines. Thus, the top surface of the metallic layer is exposed and the metal line structure that has the characteristic sloping sidewalls of this invention is formed. These outward sloping sidewalls of the metal lines form slanted edges with the semiconductor substrate, and provide a good step coverage for subsequently deposited layer.

REFERENCES:
patent: 4745045 (1988-05-01), Fredericks et al.

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