Metal line of semiconductor device having a diffusion...

Details Metal line of semiconductor device having a diffusion... Metal line of semiconductor device having a diffusion...

2007-11-15

2009-12-29

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S524000, C438S637000, C438S640000, C438S643000, C438S653000, C257S751000, C257SE21165, C257SE21584, C257SE23160, C257SE23141

Reexamination Certificate

active

07638425

ABSTRACT:
A metal line of a semiconductor device having a diffusion barrier including CrxByand a method for forming the same is described. The metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer is formed having a metal line forming region. A diffusion barrier including a CrxBylayer is subsequently formed on the surface of the metal line forming region and the insulation layer. A metal line is finally formed to fill the metal line forming region of the insulation layer on the diffusion barrier including a CrxBylayer.

REFERENCES:
patent: 5414301 (1995-05-01), Thomas
patent: 2007/0141779 (2007-06-01), Abelson et al.
Orlando Auciello et al. “Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices,” Kluwer Academic Publishers, 1992, ISBN 0-7923-2265-7, pp. 481-481.

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