Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-30
2011-08-30
Garber, Charles D (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
08008708
ABSTRACT:
An insulation layer is formed on a semiconductor substrate so as to define a metal line forming region. A diffusion barrier having a multi-layered structure of an Mox1Si1-x1layer, an Mox2Siy2Nz2layer, and an Moy3N1-y3layer is formed on a surface of the metal line forming region. A metal layer is formed on the diffusion barrier so as to fill the metal line forming region of the insulation layer.
REFERENCES:
patent: 7514185 (2009-04-01), Fukushima et al.
patent: 2001/0014425 (2001-08-01), Mitsui et al.
patent: 2006/0024953 (2006-02-01), Papa Rao et al.
patent: 2006/0270191 (2006-11-01), Tamura et al.
patent: 2007/0148814 (2007-06-01), Pellizzer et al.
patent: 2008/0132082 (2008-06-01), Lopatin et al.
patent: 10-0625816 (2006-09-01), None
Jung Dong Ha
Kim Baek Mann
Lee Nam Yeal
Oh Joon Seok
Yeom Seung Jin
Garber Charles D
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Stevenson André C
LandOfFree
Metal line of semiconductor device having a diffusion... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal line of semiconductor device having a diffusion..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal line of semiconductor device having a diffusion... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2796638