Metal line of semiconductor device having a diffusion...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Reexamination Certificate

active

08008708

ABSTRACT:
An insulation layer is formed on a semiconductor substrate so as to define a metal line forming region. A diffusion barrier having a multi-layered structure of an Mox1Si1-x1layer, an Mox2Siy2Nz2layer, and an Moy3N1-y3layer is formed on a surface of the metal line forming region. A metal layer is formed on the diffusion barrier so as to fill the metal line forming region of the insulation layer.

REFERENCES:
patent: 7514185 (2009-04-01), Fukushima et al.
patent: 2001/0014425 (2001-08-01), Mitsui et al.
patent: 2006/0024953 (2006-02-01), Papa Rao et al.
patent: 2006/0270191 (2006-11-01), Tamura et al.
patent: 2007/0148814 (2007-06-01), Pellizzer et al.
patent: 2008/0132082 (2008-06-01), Lopatin et al.
patent: 10-0625816 (2006-09-01), None

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