Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2011-07-19
2011-07-19
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S627000, C438S628000, C438S637000, C438S640000, C438S643000, C257SE21165, C257SE21294, C257SE21584
Reexamination Certificate
active
07981781
ABSTRACT:
A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a stack structure including an MoxSiyNzlayer and an Mo layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.
REFERENCES:
patent: 5938822 (1999-08-01), Chen et al.
patent: 6518106 (2003-02-01), Ngai et al.
patent: 2006/0024953 (2006-02-01), Papa Rao et al.
patent: 2007/0045854 (2007-03-01), Lim et al.
patent: 2008/0277790 (2008-11-01), Lee
patent: 2009/0001578 (2009-01-01), Jung et al.
patent: 2009/0001579 (2009-01-01), Kim et al.
patent: 2009/0001580 (2009-01-01), Jung et al.
patent: 2009/0115019 (2009-05-01), Lee et al.
patent: 2009/0166870 (2009-07-01), Kim et al.
patent: 2009/0166871 (2009-07-01), Kim et al.
patent: 2009/0283908 (2009-11-01), Kim et al.
patent: 2010/0019386 (2010-01-01), Oh et al.
patent: 1020040008593 (2004-01-01), None
Malikov et al. “Electrical Resistivity of Epitaxial Molybdenum Film Grown by Laser Ablation Deposition”, J. Appl. Phys., vol. 82, No. 11, Dec. 1, 1997, American Institute of Physics, pp. 5555-5559.
Kim Jae Hong
Oh Joon Seok
Yeom Seung Jin
Ahmadi Mohsen
Garber Charles D
Hynix / Semiconductor Inc.
Ladas & Parry LLP
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