Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-10-06
2000-10-24
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438622, 438679, 438687, 438685, H01L 2124, H01L 214763
Patent
active
061367095
ABSTRACT:
A method for depositing metal lines for semiconductor devices, in accordance with the present invention includes the steps of providing a semiconductor wafer including a dielectric layer formed on the wafer, the dielectric layer having vias formed therein and placing the wafer in a deposition chamber. The method further includes depositing a metal on the wafer to fill the vias wherein the metal depositing is initiated when the wafer is at a first temperature and the depositing is continued while heating the wafer to a target temperature which is greater than the first temperature.
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patent: 5407863 (1995-04-01), Katsura et al.
patent: 5807760 (1998-09-01), Buckfeller et al.
Clevenger Larry
Iggulden Roy
Schmidbauer Sven
Weber Stefan J.
Weigand Peter
Bowers Charles
Infineon Technologies North America Corp.
International Business Machines - Corporation
Paschburg Donald B.
Pham Thanhha
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