Metal layered semiconductor laser

Details Metal layered semiconductor laser Metal layered semiconductor laser

1997-03-28

2000-01-18

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

257744, 257745, 257751, 257763, 257765, 257766, H01L 3300

Patent

active

060159804

ABSTRACT:
By using fusion of a heat spreader layer, a large bandwidth, high power semiconductor laser can be fabricated. The use of multiple metals with low thermal resistance allows for higher power because heat flow is conducted away from the active region easily. The extraction of heat from the active region makes the resultant laser more stable with the capability for higher power outputs.

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Dubravko Ivan Babic, Double-fused long-wavelength vertical-cavity lasers, Ph.D. Dissertation, ECE Technical Report #95-20, Aug. 1995, University of California at Santa Barbara, California 93106.

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