Metal layer patterns of a semiconductor device and a method for

Details Metal layer patterns of a semiconductor device and a method for Metal layer patterns of a semiconductor device and a method for

1997-04-02

1999-07-20

Saadat, Mahshid

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438625, 438928, 257773, H01L 2348, H01L 2352, H01L 2940

Patent

active

059267330

ABSTRACT:
The present invention provides metal layer patterns of a semiconductor device which reduces the effect of the current induced by the plasma in the etching process and prevents the device characteristics from being deteriorated, by a method for forming a photomask to pattern metal layers of a semiconductor device including the steps of: designing base metal line patterns, the base metal line patterns being required for the proper operation of the semiconductor device; expanding the base metal line patterns outwardly by an expanding distance; designing a dummy metal line patterns by reversing the expanded base metal line patterns; and designing a final metal line patterns of the semiconductor device by combining the base metal line patterns and the dummy metal line patterns.

REFERENCES:
patent: 5032890 (1991-07-01), Ushiku et al.
patent: 5534728 (1996-07-01), Kim et al.
patent: 5663599 (1997-09-01), Lur

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