Metal layer in semiconductor device and method of forming...

Details Metal layer in semiconductor device and method of forming... Metal layer in semiconductor device and method of forming...

2007-10-30

2007-10-30

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S630000, C438S682000, C257S751000, C257S758000, C257S763000

Reexamination Certificate

active

11294455

ABSTRACT:
Canting or falling of an upper metal line may be prevented by improving adhesion between an insulation layer and a metal layer. A method for forming a semiconductor which improves adhesion between an insulation layer and a metal layer includes: preparing a substrate formed with a lower metal layer; forming an insulation layer on the substrate; forming a plug after etching the insulation layer; performing a silicon ion implantation process from above the insulation layer; forming an upper metal layer on the insulation layer, the upper metal layer having a bottom layer of a Ti layer or a TiN layer; and siliciding a predetermined region of the bottom layer of the upper metal layer by heat treatment of the substrate.

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patent: 5736421 (1998-04-01), Shimomura et al.
patent: 6297137 (2001-10-01), Jung
patent: 6545317 (2003-04-01), Hokazono et al.
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patent: 6727156 (2004-04-01), Jung et al.
patent: 2003/0122985 (2003-07-01), Park et al.
patent: 2005/0124128 (2005-06-01), Kim

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