Metal interconnection structure of a semiconductor device...

Details Metal interconnection structure of a semiconductor device... Metal interconnection structure of a semiconductor device...

2005-11-07

2008-11-18

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000, C438S680000, C257SE21170, C257SE21218, C257SE21227, C257SE21249, C257SE21304, C257SE21585

Reexamination Certificate

active

07452801

ABSTRACT:
Provided is a metal interconnection structure of a semiconductor device, including a first metal film pattern disposed on an upper part of an insulation film of a semiconductor substrate; an intermetallic dielectric film having a metal contact plug in which a barrier layer, a metal film for contact plug and a second metal film are sequentially disposed, on the first metal film pattern; and a second metal film pattern disposed on the metal contact plug and intermetallic dielectric film and connected to the metal contact plug.

REFERENCES:
patent: 2005/0110070 (2005-05-01), Omura
patent: 2005/0142841 (2005-06-01), Lee
patent: 2006/0081836 (2006-04-01), Kimura et al.
patent: 2003-0050655 (2003-06-01), None
patent: 2004-0043219 (2004-05-01), None

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