Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-01-11
2005-01-11
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S533000, C438S618000, C438S622000, C438S624000, C438S627000, C438S628000, C438S629000, C438S128000, C438S637000, C257S211000, C257S750000, C257S751000, C257S753000
Reexamination Certificate
active
06841477
ABSTRACT:
A semiconductor device comprising: a base substrate including a semiconductor substrate10and a semiconductor element formed on the semiconductor substrate10; an insulation film22, 24, 26formed on the base substrate having an opening30, 32; and a metal interconnection42formed buried in the opening30, 32including: a barrier layer34formed on an inside wall and a bottom of the opening30, 32; an adhesion layer36containing zirconium formed on the barrier layer34; and a metal interconnection material38, 40containing copper as a main component formed on the barrier layer36. Whereby the peeling of the copper interconnection in the fabrication process can be prevented. The electro migration resistance and stress migration resistance of the copper interconnection can be further improved.
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Arent & Fox PLLC
Fujitsu Limited
Lee, Jr. Granvill D.
Smith Matthew
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