Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-11-07
2010-06-29
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S619000, C438S620000, C438S621000, C438S623000, C438S622000, C257S783000, C257S295000, C257S700000, C257S774000, C257S773000, C257S037000, C257S292000, C257S310000
Reexamination Certificate
active
07745323
ABSTRACT:
Disclosed herein is a metal interconnection structure of a semiconductor device, comprising lower metal interconnection layers disposed on a semiconductor substrate, a buffer layer made of a metal oxide disposed thereon, an intermetallic dielectric layer made of a low-k material disposed on the buffer layer of the metal oxide, and an upper metal interconnection layer disposed on the intermetallic dielectric layer and electrically connected through the intermetallic dielectric layer and buffer layer to the lower metal interconnection layers.
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Kim Su Ho
Park Dong-Su
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Singal Ankush K
Toledo Fernando L
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