Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-01-30
1999-10-26
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257763, 257770, H01L 2348, H01L 2352, H01L 2940
Patent
active
059734027
ABSTRACT:
A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.
REFERENCES:
patent: 5489367 (1996-02-01), Kubata et al.
patent: 5581125 (1996-12-01), Maeda
patent: 5703403 (1997-12-01), Sobue et al.
Kaizuka Takeshi
Katagiri Tomoharu
Kawano Yumiko
Kondoh Eiichi
Nakano Tadashi
Clark S. V.
Jackson Jerome
Kawasaki Steel Corporation
LandOfFree
Metal interconnection and method for making does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal interconnection and method for making, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal interconnection and method for making will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-767991