Metal interconnect layer of semiconductor device and method...

Details Metal interconnect layer of semiconductor device and method... Metal interconnect layer of semiconductor device and method...

2006-05-16

2006-05-16

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000

Reexamination Certificate

active

07045896

ABSTRACT:
A metal interconnect layer of a semiconductor device, and a method for forming a metal interconnect layer of a semiconductor device are provided. The lower portion of a metal interconnect layer is wider than the upper portion of the metal interconnect layer. In another interconnect structure in accordance with the invention, the middle portion of the metal interconnect layer is wider than the upper and lower portions of the metal interconnect layer.

REFERENCES:
patent: 5442236 (1995-08-01), Fukazawa
patent: 6737748 (2004-05-01), Bauch et al.

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