Metal interconnect features with a doping gradient

Details Metal interconnect features with a doping gradient Metal interconnect features with a doping gradient

2007-01-30

2007-01-30

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C257SE21586

Reexamination Certificate

active

10913759

ABSTRACT:
A metal filled damascene structure with improved electromigration resistance and method for forming the same, the method including providing a semiconductor process wafer comprising damascene openings; and, depositing metal and at least one metal dopant according to an ECD process to from a metal filled damascene comprising a doped metal alloy portion.

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patent: WO 02/045142 (2003-02-01), None

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