Metal interconnect fabrication with dual plasma silicon dioxide

Details Metal interconnect fabrication with dual plasma silicon dioxide Metal interconnect fabrication with dual plasma silicon dioxide

1993-09-24

1995-12-05

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430322, 430323, 430327, 430313, G03F 700

Patent

active

054728258

ABSTRACT:
In the fabrication of an integrated circuit, an intermetal dielectric is formed using a plural plasma processes that can be performed without having to transfer the wafer in the interim. This saves on wafer handling. A wafer with a patterned first metal wafer is placed into a plasma chamber. A relatively low-power noble gas plasma is applied to clean the wafer. A reactive plasma treatment is then used to deposit silicon dioxide to a thickness greater than ultimately desired. A noble gas plasma is used to etch back the silicon dioxide. Spin-on glass is then applied. The previous etch back aids the conformance of the spin-on glass to the underlying structure. The spin-on glass can be polished for further planarization. A second silicon dioxide layer can be deposited on top of the spin-on glass. Via apertures can be photolithographically defined through the three-layer dielectric. Finally, second layer metal is deposited and patterned. The method provides for high wafer throughput, while minimizing voids at the interface between the spin-on glass and the underlying silicon dioxide layer.

REFERENCES:
patent: 4176003 (1979-11-01), Brower et al.
patent: 5310621 (1994-05-01), Sayka
A. Sayka & J. G. Eberhart, "The Effect of Plasma Treatment on the Wettability of Substrate Materials", Solid State Technology, May, 1969, pp. 69-70.

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