Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-04-01
2008-08-05
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S192000
Reexamination Certificate
active
07408217
ABSTRACT:
Provided is a metal-insulator-transition switching transistor with a gate electrode on a silicon substrate (back-gate structure) and a metal-insulator-transition channel layer of VO2that changes from an insulator phase to a metal phase, or vice versa, depending on a variation of an electric field, and a method for manufacturing the same, whereby it is possible to fabricate a metal-insulator-transition switching transistor having high current gain characteristics and being stable thermally.
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‘Gate-Induced Mott Transition’. Kim, Hyun-Tak, et al. Telecom. Basic Research Lab, ETRI, Daejeon 305-350, Korea (May 27, 2003) pp. 1-4.
Kim, Hyun-Tak et al, “Gate Induced Mott Transition”, May 27, 2003,New Journal of Physics.
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Chae Byung Gyu
Kang Kwang Yong
Kim Hyun Tak
Maeng Sung Lyul
Yoon Doo Hyeb
Electronics and Telecommunications Research Institute
Ladas & Parry LLP
Pham Long
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