Metal insulator semiconductor field effect transistor having...

Details Metal insulator semiconductor field effect transistor having... Metal insulator semiconductor field effect transistor having...

2011-01-11

2011-01-11

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257S374000, C257S288000, C257SE21014, C438S197000, C438S201000, C438S257000

Reexamination Certificate

active

07868395

ABSTRACT:
A semiconductor device includes a fin-shaped semiconductor layer, a gate electrode section formed in a widthwise direction of the semiconductor layer with a gate insulation film interposed therebetween, the gate electrode section including a plurality of electrode materials having different work functions and stacked one another, and a channel section formed adjacent to the gate insulation film in the semiconductor layer. The semiconductor device further includes source and drain regions formed adjacent to the channel section.

REFERENCES:
patent: 6977837 (2005-12-01), Watanabe et al.
patent: 2006/0029887 (2006-02-01), Oh et al.
U.S. Appl. No. 11/203,425, filed Aug. 15, 2005, Izumida et al.
M. Kondo et al., “A FinFET Design Based on Three-Dimensional Process and Device Simulations”, IEEE 2003, pp. 179-182.
J. Kedzierski et al, “Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation”, IEDM 2002, Tech Digest, pp. 247-250, Dec. 2002.

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