Metal-insulator semiconductor field-effect transistor

Details Metal-insulator semiconductor field-effect transistor Metal-insulator semiconductor field-effect transistor

1993-09-27

1995-01-17

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 76, 257 77, 257613, 257615, H01L 2978, H01L 29161

Patent

active

053828224

ABSTRACT:
A MISFET (metal-insulator semiconductor field-effect transistor) may be used for application at temperatures above 200.degree. C. In particular, leakage currents between the gate electrode (6) and the drain (8) are kept at a low level, and a considerable rate of rise in its control characteristic is achieved. An insulating layer (4) of diamond is arranged between the gate electrode (6) and a semiconductor (2) having a larger energy gap than silicon (Si).

REFERENCES:
patent: 5087959 (1992-02-01), Omori et al.
patent: 5107315 (1992-04-01), Kumagai et al.
J. Appl. Phys., vol. 64, No. 4, 15 Aug. 1988, pp. 2168-2177, J. W. Palmour et al.: Characterization of device parameters in high-temperature metal-oxide-semiconductor-field-effect transistors in .beta.-SIC thin films.
Materials Science and Engineering, B11, 1992, pp. 257-263, Alan T. Collins:Diamond electronic devices --can they outperform silicon or GaAs?.
MAT. RES. SOC. SYMP. PROC., vol. 162, 1990, Materials Research Society, pp. 15-22, M. W. Geis: Growth of Device-Quality Homoepitaxial Diamond Thin Films.

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