Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-02
2006-05-02
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S532000
Reexamination Certificate
active
07038266
ABSTRACT:
A microelectronic product and a method for fabricating the same each provide a capacitor formed interposed between a first dielectric layer and a second dielectric layer formed over a substrate having a first contact region and a second contact region exposed therein. The capacitor is also connected to a first conductor stud that penetrate4s the first dielectric layer and contacts the first contact region and a second conductor stud that penetrates the second dielectric layer. A contiguous conductor interconnect and conductor stud layer is formed within a dual damascene aperture through the second dielectric layer and the first dielectric layer and contacting the second contact region. An etch stop layer employed when forming a trench within the dual damascene aperture also passivates a capacitor sidewall.
REFERENCES:
patent: 6492222 (2002-12-01), Xing
patent: 6583491 (2003-06-01), Huang et al.
patent: 475217 (2002-02-01), None
Nguyen Cuong
Taiwan Semiconductor Manufacturing Co Ltd
Tung & Associates
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