Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-12-04
2007-12-04
Nguyen, Thanh (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S309000, C257S306000
Reexamination Certificate
active
10870745
ABSTRACT:
A MIM capacitor can include a doped polysilicon contact plug in an interlayer insulating film. A lower electrode of the MIM capacitor includes a transition metal nitride film is on the doped polysilicon contact plug. A transition metal silicide film is between the doped polysilicon contact plug and the transition metal nitride film.
REFERENCES:
patent: 6344964 (2002-02-01), Adler
patent: 6436787 (2002-08-01), Shih et al.
patent: 6949427 (2005-09-01), Chen et al.
patent: 2003/0032234 (2003-02-01), Suzuki
patent: 2003/0203633 (2003-10-01), Sinha
Cho Nam-myun
Choi Jae-hyoung
Choi Jeong-sik
Chung Jung-hee
Oh Se-hoon
Myers Bigel Sibley & Sajovec P.A.
Nguyen Thanh
Samsung Electronics Co,. Ltd.
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